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| SSF1016 Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1016 is a new generation of high voltage and low current N-Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1016 is assembled in high reliability and qualified assembly house. Application: Power switching application SSF1016 TOP View (T0-220) ID =75A BV=100V Rdson=16m(Max. Absolute Maximum Ratings Parameter ID@Tc=25 C ID@Tc=100C IDM PD@TC=25C VGS EAS EAR dv/dt TJ TSTG Thermal Resistance Parameter RJC RJA Junction-to-case Junction-to-ambient Min. -- -- Typ. 0.55 -- Max. -- 62 Units C/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy Repetitive avalanche energy Peak diode recovery voltage Operating Junction and Storage Temperature Range Max. 75 65 300 227 1.5 20 380 TBD 31 -55 to +150 W W/ C V mJ mJ v/ns C A Units Electrical Characteristics @TJ=25 C(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Source breakdown voltage Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min. 100 -- 2.0 -- -- -- -- 2009.8.10 Typ. -- 11 -- -- -- -- -- Max. Units -- 16 4.0 2 10 100 -100 V V Test Conditions VGS=0V,ID=250A VDS=VGS,ID=250A VDS=100V,VGS=0V m VGS=10V,ID=30A A VDS=100V, VGS=0V,TJ=150C nA VGS=20V VGS=-20V Version : 1.0 page 1of5 IGSS (c)Silikron Semiconductor CO.,LTD. SSF1016 Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance -- -- -- -- -- -- -- -- -- -- 90 20 31 18.2 15.6 70.5 13.8 3150 350 240 nS -- -- VDD=30V ID=2A ,RL=15 RG=2.5 VGS=10V VGS=0V pF VDS=25V f=1.0MHZ nC ID=30A,VGS=10V VDD=30V Source-Drain Ratings and Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Reverse Recovery Time Forward Turn-on Time . . Min. -- -- -- Typ. -- -- -- 57 107 Max. 75 A 300 1.3 -- -- V nS C Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25C,IS=60A,VGS=0V TJ=25C,IF=75A di/dt=100A/s VSD Diode Forward Voltage trr ton Qrr Reverse Recovery Charge Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: Repetitive rating; pulse width limited by max junction temperature. Test condition: L =0.3mH, VDD = 50V,Id=37A Pulse width300S, duty cycle1.5% ; RG = 25 Starting TJ = 25C EAS Test Circuit: Gate Charge Test Circuit: (c)Silikron Semiconductor CO.,LTD. 2009.8.10 Version : 1.0 page 2of5 SSF1016 Switch Time Test Circuit: Switch Waveform: Transfer Characteristic Capacitance On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature (c)Silikron Semiconductor CO.,LTD. 2009.8.10 Version : 1.0 page 3of5 SSF1016 Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs Junction Transient Thermal Impedance Curve (c)Silikron Semiconductor CO.,LTD. 2009.8.10 Version : 1.0 page 4of5 SSF1016 TO-220 MECHANICAL DATA: (c)Silikron Semiconductor CO.,LTD. 2009.8.10 Version : 1.0 page 5of5 |
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